![]() ![]() MOSFETs with Si/GaAs stacked channel film relatively exhibits a higher on-state current, compared with pure Si MOSFET. For example, FETs fabricated with materials of germanium (Ge) and galliumarsenic (GaAs) are promising for nanoscale metal-oxidesemiconductor FETs (MOSFETs) due to higher carrier mobility, compared with pure silicon (Si) MOSFETs. Sistors (FETs) in particular, FETs with diverse materials will open possibility for next generation high speed and high power electronic devices. Chen Department of Electrophysics, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu 300, Taiwan Li () Department of Communication Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu 300, Taiwan e-mail: W.-H. Introduction Novel structures and materials have recently been of great interest in developing advanced nanoscale field effect tranY. However, quantitatively accurate estimation of device characteristics will depend upon more precise calculation of band structure of the stacked film. Among Si, germanium (Ge), and Si/Ge MOSFETs, Si/GaAs MOSFET relatively exhibits a higher driving capability due to higher carrier mobility within the Si/GaAs film. Compared with the results of pure Si MOSFET, Si/GaAs MOSFET shows promising characteristics after properly selecting the thickness of Si/GaAs film. ![]() By calculating several important device characteristics, such as the on-state current, the subthreshold swing, the drain induced barrier lowering, the threshold voltage, the threshold voltage roll-off, and the output resistance, a 50 nm Si/GaAs MOSFET is simulated with respect to different thicknesses of Si/GaAs film. Numerical simulation of electrical characteristics in nanoscale Si/GaAs MOSFETs Yiming Li Ĭ Springer Science Business Media, LLC 2006 Ībstract In this paper, electrical characteristics of metaloxide-semiconductor field effect transistor (MOSFET) with silicon/gallium-arsenic (Si/GaAs) stacked film are numerically studied.
0 Comments
Leave a Reply. |